HM5164805F Series, HM5165805F Series
Operation Table
RAS
CAS
WE
×
OE
I/O 0 to I/O 7
High-Z
Dout
Operation
H
×
L
L
L
L
H
L
×
Standby
L
H
L
Read cycle
L
L*2
L*2
H to L
×
×
Din
Early write cycle
Delayed write cycle
Read-modify-write cycle
RAS-only refresh cycle
L
H
Din
L
L to H
Dout/Din
High-Z
High-Z
L
×
×
H to L
H
CAS-before-RAS refresh cycle or
Self refresh cycle (L-version)
L
L
H
H
High-Z
Read cycle (Output disabled)
Notes: 1. H: VIH (inactive), L: VIL (active), ×: VIH or VIL
2. tWCS ≥ 0 ns: Early write cycle
tWCS < 0 ns: Delayed write cycle
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Terminal voltage on any pin relative to VSS VT
–0.5 to VCC + 0.5 (≤ 4.6 V (max))
–0.5 to +4.6
V
Power supply voltage relative to VSS
Short circuit output current
Power dissipation
VCC
V
Iout
PT
50
mA
W
°C
1.0
Storage temperature
Tstg
–55 to +125
DC Operating Conditions
Parameter
Symbol
VCC
Min
3.0
0
Typ
3.3
0
Max
3.6
Unit
V
Notes
Supply voltage
1, 2
2
VSS
0
V
Input high voltage
VIH
2.0
–0.3
0
—
VCC + 0.3
0.8
V
1
Input low voltage
VIL
—
V
1
Ambient temperature range
Notes: 1. All voltage referred to VSS.
Ta
—
70
˚C
2. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins
must be on the same level.
Data Sheet E0098H10
7
ELPIDA [ ELPIDA MEMORY ]
