HM5164805F Series, HM5165805F Series
DC Characteristics (HM5164805F Series)
HM5164805F
-5
-6
Parameter
Operating current*1, *2
Symbol Min
Max
115
2
Min
—
Max
105
2
Unit Test conditions
ICC1
ICC2
—
—
mA
mA
tRC = min
Standby current
—
TTL interface
RAS, CAS = VIH
Dout = High-Z
—
—
0.5
—
—
0.5
mA
µA
CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
ICC2
300
300
CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
RAS-only refresh current*2
Standby current*1
ICC3
ICC5
—
—
115
5
—
—
105
5
mA
mA
tRC = min
RAS = VIH, CAS = VIL
Dout = enable
CAS-before-RAS refresh
ICC6
ICC7
ICC10
—
—
—
115
110
1.2
—
—
—
105
100
1.2
mA
mA
mA
tRC = min
current
EDO page mode current*1, *3
RAS = VIL , CAS cycle,
tHPC = tHPC min
Battery backup current*4
(Standby with CBR refresh)
(L-version)
CMOS interface
Dout = High-Z
CBR refresh: tRC = 15.6µs
tRAS ≤ 0.3 µs
Self refresh mode current
(L-version)
ICC11
—
500
—
500
µA
CMOS interface
RAS, CAS ≤ 0.2 V
Dout = High-Z
Input leakage current
Output leakage current
ILI
–5
–5
5
5
–5
–5
5
5
µA
µA
0 V ≤ Vin ≤ VCC + 0.3 V
ILO
0 V ≤ Vout ≤ VCC
Dout = disable
Output high voltage
Output low voltage
VOH
VOL
2.4
0
VCC
0.4
2.4
0
VCC
0.4
V
V
High Iout = –2 mA
Low Iout = 2 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at theoutput
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Measured with one sequential address change per EDO cycle, tHPC
.
4. VIH ≥ VCC – 0.2 V, 0 V ≤ VIL ≤ 0.2 V.
Data Sheet E0098H10
8
ELPIDA [ ELPIDA MEMORY ]
