EM39LV040
4M (512Kx8) Bits Flash Memory
SPECIFICATION
AC Characteristics
Read Cycle Timing Parameters
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ
*
T
OLZ
*
T
CHZ
*
T
OHZ
*
T
OH
*
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
45REC
45
45
45
30
0
0
15
15
0
55REC
55
55
55
30
0
0
15
15
0
70REC
70
0
70
70
35
0
0
25
25
0
90REC
90
90
90
45
0
0
30
30
0
Min Max Min Max Min Max Min Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 9:
Read Cycle Timing Parameters
Program/Erase Cycle Timing Parameter
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH
*
T
CPH
*
T
DS
T
DH
*
T
IDA
*
T
SE
T
SCE
Parameter
Byte-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector Erase
Chip Erase
Min
0
30
0
0
0
10
40
40
30
30
40
0
Max
16
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
150
60
60
ns
ms
ms
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 10:
Program/Erase Cycle Timing Parameter
This specification is subject to change without further notice. (07.22.2004 V1.0)
Page 10 of 21
EMC [ ELAN MICROELECTRONICS CORP ]
