EM620FV8BT Series
Low Power, 256Kx8 SRAM
256K x8 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15mm Full CMOS
- Organization :256K x8
- Power Supply Voltage
=> EM620FV8BS Series : 2.7V~3.6V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
-
Package Type: 32-TSOP1
PRODUCT FAMILY
Product
Family
EM620FV8BT-45LF
EM620FV8BT-55LF
EM620FV8BT-70LF
Operating
Temperature
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Power Dissipation
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
1µA
1µA
1µA
Operating
(I
CC1
.Max)
3mA
3mA
3mA
PKG Type
GENERAL DESCRIPTION
The EM620FV8BT series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
The EM620FV8BT series are available in KGD, JEDEC
standard 32 pin 8mm x 20mm TSOP.
2.7V~3.6V
2.7V~3.6V
2.7V~3.6V
45ns
55ns
70ns
32-TSOP1
32-TSOP1
32-TSOP1
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
EM620FV8BT-45LF
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
VSS
I/O 2
I/O 1
I/O 0
A0
A1
A2
A3
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
V
CC
V
SS
Row Select
Memory Array
1024 x 2048
I/O0 ~ I/O7
Data
Cont
I/O Circuit
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
Name
CS1,CS2
OE
WE
A0~A17
I/O0~I/O7
Function
Chip select inputs
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
Vcc
Vss
NC
Function
Power Supply
Ground
No Connection
WE
OE
CS1
CS2
Control Logic
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
