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EM625FU8E-55LF 参数 Datasheet PDF下载

EM625FU8E-55LF图片预览
型号: EM625FU8E-55LF
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8位低功耗和低电压全CMOS静态RAM [256K x8 bit Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 477 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM620FV8BT Series
Low Power, 256Kx8 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=V
IL
, CS2=WE=V
IH
)
t
RC
Address
t
AA
t
OH
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = V
IH
)
t
RC
Address
t
AA
CS1
t
CO1,2
t
OH
CS2
t
OE
OE
t
OLZ
Data Valid
t
HZ1,2
t
OHZ
t
WHZ
Data Out
High-Z
t
LZ1,2
NOTES
(READ CYCLE)
1. t
HZ1,2
and t
OHZ
are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, t
HZ1,2
(Max.) is less than t
LZ1,2
(Min.) both for a given device and from device to
device interconnection.
6