EM641FT8
Low Power, 512Kx8 SRAM
512K x8 Bit Low Power CMOS Static RAM
GENERAL PHYSICAL SPECIFICATIONS
FEATURES
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization :
- Very high speed : 45ns
- Process Technology : 0.15um Full CMOS
- Organization : 512K x8
=> Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
- Topside Passivation :
- Power Supply Voltage
=> EM641FT8V : 4.5V~5.5V
=> Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms
- Typical Pad Size : 76.0um x 80.0um
- Wafer diameter : 8 inch
- Low Data Retention Voltage :1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
- KGD based on SOP package structure
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A
0
V
A
CC
1
A
V
SS
2
A
3
Memory Array
512K x 8
A
4
A
5
A
6
A
7
A
8
A
9
A
10
Data
Cont
I/O0 ~ I/O7
I/O Circuit
Column Select
A
A
A
A
A
14 15 16
17
A
A
A
18
13
11 12
WE
OE
CS
Control Logic
Name
Function
Name
Function
Power Supply
Ground
VCC
CS
Chip select input
Output Enable input
Write Enable input
Address Inputs
VSS
OE
WE
A0~A18
I/O0~I/O7
Data Inputs/Outputs
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
