EM641FT8
512K x8 Bit Low Power CMOS Static RAM
FEATURES
- Very high speed : 45ns
- Process Technology : 0.15um Full CMOS
- Organization : 512K x8
- Power Supply Voltage
=> EM641FT8V : 4.5V~5.5V
- Low Data Retention Voltage :1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
- KGD based on SOP package structure
Low Power, 512Kx8 SRAM
GENERAL PHYSICAL SPECIFICATIONS
-
Backside die surface of polished bare silicon
-
Typical Die Thickness = 725um +/-15um
-
Typical top-level metallization :
=> Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
-
Topside Passivation :
=> Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms
-
Typical Pad Size : 76.0um x 80.0um
-
Wafer diameter : 8 inch
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
V
CC
V
SS
Row Select
Memory Array
512K x 8
I/O
0
~ I/O
7
Data
Cont
I/O Circuit
Column Select
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
WE
OE
CS
Control Logic
Name
CS
OE
WE
A
0
~A
18
I/O
0
~I/O
7
Function
Chip select input
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
V
CC
V
SS
Function
Power Supply
Ground
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
