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EM622FU8GU-70LF 参数 Datasheet PDF下载

EM622FU8GU-70LF图片预览
型号: EM622FU8GU-70LF
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位低功耗全CMOS静态RAM [512K x8 bit Low Power Full CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 387 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM641FT8
TIMING WAVEFORM OF WRITE CYCLE(3) (WE Controlled, OE LOW)
Low Power, 512Kx8 SRAM
t
WC
Address
t
CW
CS
t
AW
t
AS
3)
WE
t
DW
Data in
High-Z
t
WHZ
Data out
Data Undefined
Data Valid
2)
t
WR
4)
t
WP
1)
t
DH
High-Z
NOTES
(WRITE CYCLE)
1. A write occurs during the overlap(t
WP
) of low CS and low WE. A write begins at the latest transition among
CS goes low and WE goes low. A write ends at the earliest transition when CS goes high and WE goes high.
The t
WP
is measured from the beginning of write to the end of write.
2. t
CW
is measured from the CS going low to end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CS
or WE going high.
8