EM4450
EM4550
Absolute Maximum Ratings
Parameter
Symbol
Maximum AC peak Current
I
COIL
induced on COIL1 and COIL2
Power Supply
V
DD
V
max
Maximum Voltage other pads
V
min
Minimum Voltage other pads
Storage temperature
T
store
Electrostatic discharge
maximum
V
ESD
to MIL-STD-883C method
3015
Conditions
± 30 mA
-0.3 to 3.5 V
V
DD
+0.3V
V
SS
-0.3V
-55 to +125°C
2000V
Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified
operating conditions may affect device reliability or cause malfunction.
Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be
taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal
voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level.
Operating Conditions
Parameter
Operating Temperature
Maximum coil current
AC Voltage on Coil
Supply Frequency
Symbol Min
T
op
-40
I
COIL
V
coil
f
coil
100
Unit
°C
mA
note 1
V
pp
150 kHz
Max
+85
10
note 1:
Maximum voltage is defined by forcing 10mA on Coil1 - Coil2.
Electrical Characteristics
V
DD
=2.5V, V
SS
=0V , f
coil
= 125 kHz Sine wave , V
coil
= 1V
pp
, T
op
= 25°C , unless otherwise specified
Parameter
Symbol
Conditions
Min
Typ
Max
Supply Voltage
V
DD
2.3
3.2
Minimum EEPROM write
2
V
DDee
voltage
Power Check EEPROM write
I
PWcheck
V
DD
= 2.8V
32
Supply current / read
I
rd
Read Mode
3
Suppy current / write
I
wr
Write mode (V
DD
= 2.8V)
22
0.50
V
(COIL1 - VSS)
& V
(COIL2 - VSS)
I
coil
= 100µA
Modulator ON voltage drop
V
ON
2.50
V
(COIL1 - VSS)
& V
(COIL2 - VSS)
I
coil
= 5 mA
Monoflop
T
mono
35
85
Resonance Capacitor
C
r
166.6
170
173.4
Powercheck level
V
PWcheck
2
2.7
Power On Reset level high
V
prh
Rising Supply
1
1.5
Clock extractor input min.
V
clkmin
Minimum Voltage for Clock Extraction
0.25
25
V
clkmax
Clock extractor input max.
Max. Voltage to detect modulation stop
EEPROM data endurance
N
cy
Erase all / Write all at V
DD
= 3.5 V
100'000
EEPROM retention
T
ret
Top = 55°C after 100'000 cycles (note 2)
10
note 2:
Based on 1000 hours at 150°C
Unit
V
V
µA
µA
µA
V
V
µs
pF
V
V
V
pp
mV
pp
cycles
years
Copyright
2003, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
