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EN25B05 参数 Datasheet PDF下载

EN25B05图片预览
型号: EN25B05
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的串行闪存与引导和参数部门 [512 Kbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存
文件页数/大小: 30 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B05  
Read Data Bytes (READ) (03h)  
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data  
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the  
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial Data  
Output (DO), each bit being shifted out, at a maximum frequency f , during the falling edge of Serial Clock  
R
(CLK).  
The instruction sequence is shown in Figure 9.. The first byte addressed can be at any location. The  
address is automatically incremented to the next higher address after each byte of data is shifted out. The  
whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the  
highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be  
continued indefinitely.  
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select  
(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while  
an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is  
in progress.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
12  
Rev. B, Issue Date: 2006/12/26