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EN25B10-75GCP 参数 Datasheet PDF下载

EN25B10-75GCP图片预览
型号: EN25B10-75GCP
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位串行闪存与引导和参数部门 [1 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B10  
Release from Deep Power-down and Read Device ID (RDI)  
Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release  
from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes the device  
out of the Deep Power-down mode.  
Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature that  
is read by the Read Identifier (RDID) instruction. The old-style Electronic Signature is supported for  
reasons of backward compatibility, only, and should not be used for new designs. New designs should,  
instead, make use of the JEDEC 16-bit Electronic Signature, and the Read Identifier (RDID) instruction.  
When used only to release the device from the power-down state, the instruction is issued by driving the  
CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 15. After the time  
duration of t  
(See AC Characteristics) the device will resume normal operation and other instructions  
RES1  
will be accepted. The CS# pin must remain high during the t  
time duration.  
RES1  
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by  
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID  
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure  
16. The Device ID value for the EN25B10 are listed in Table 5. The Device ID can be read continuously.  
The instruction is completed by driving CS# high.  
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was  
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If  
the device was previously in the Deep Pow-er-down mode, though, the transition to the Standby Power  
mode is delayed by t  
, and Chip Select (CS#) must remain High for at least t  
(max), as specified  
RES2  
RES2  
in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive,  
decode and execute instructions.  
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep  
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the  
device, and can be applied even if the Deep Power-down mode has not been entered.  
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or  
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in  
progress.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
17  
Rev. B, Issue Date: 2006/12/26