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EN25F20-100GC 参数 Datasheet PDF下载

EN25F20-100GC图片预览
型号: EN25F20-100GC
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位串行闪存与4KB的扇区制服 [2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 31 页 / 395 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F20
MEMORY ORGANIZATION
The memory is organized as:
262,144 bytes
Uniform Sector Architecture
4 blocks of 64-Kbyte
64 sectors of 4-Kbyte
1024 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
3
Sector
63
….
48
47
….
2
32
31
….
1
16
15
….
4
3
2
1
0
Address range
03F000h
….
030000h
02F000h
….
020000h
01F000h
….
010000h
00F000h
….
004000h
003000h
002000h
001000h
000000h
03FFFFh
030FFFh
02FFFFh
020FFFh
01FFFFh
010FFFh
00FFFFh
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
….
….
….
….
0
OPERATING FEATURES
SPI Modes
The EN25F20 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation Modes 0
(0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as shown in Figure
3, concerns the normal state of the SCK signal when the SPI bus master is in standby and data is not
being transferred to the Serial Flash. For Mode 0 the SCK signal is normally low. For Mode 3 the SCK
signal is normally high. In either case data input on the DI pin is sampled on the rising edge of the SCK.
Data output on the DO pin is clocked out on the falling edge of SCK.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/15