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EN25P10-50GC 参数 Datasheet PDF下载

EN25P10-50GC图片预览
型号: EN25P10-50GC
PDF下载: 下载PDF文件 查看货源
内容描述: 1 Mbit的统一部门,串行闪存 [1 Mbit Uniform Sector, Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25P10  
Sector Erase (SE) (D8h)  
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be  
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable  
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).  
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction  
code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see Table 2.a and  
Table 2.b) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low  
for the entire duration of the sequence.  
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth  
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not  
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration  
is t ) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check  
SE  
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed  
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,  
the Write Enable Latch (WEL) bit is reset.  
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect (BP1, BP0) bits  
(see Table 3.a and Table 3.b) is not executed.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
14  
Rev. C, Issue Date: 2007/5/4