欢迎访问ic37.com |
会员登录 免费注册
发布采购

EN25P10-50GC 参数 Datasheet PDF下载

EN25P10-50GC图片预览
型号: EN25P10-50GC
PDF下载: 下载PDF文件 查看货源
内容描述: 1 Mbit的统一部门,串行闪存 [1 Mbit Uniform Sector, Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
 浏览型号EN25P10-50GC的Datasheet PDF文件第5页浏览型号EN25P10-50GC的Datasheet PDF文件第6页浏览型号EN25P10-50GC的Datasheet PDF文件第7页浏览型号EN25P10-50GC的Datasheet PDF文件第8页浏览型号EN25P10-50GC的Datasheet PDF文件第10页浏览型号EN25P10-50GC的Datasheet PDF文件第11页浏览型号EN25P10-50GC的Datasheet PDF文件第12页浏览型号EN25P10-50GC的Datasheet PDF文件第13页  
EN25P10
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write Enable
Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and
Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the instruction
code, and then driving Chip Select (CS#) High.
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving Chip Select (CS#) low, shifting the instruction code
“04h” into the DI pin and then driving Chip Select (CS#) high. Note that the WEL bit is automatically reset
after Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, and Bulk
Erase instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/5/4