欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM481M3244VBB-75FE 参数 Datasheet PDF下载

EM481M3244VBB-75FE图片预览
型号: EM481M3244VBB-75FE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB ( 2M × 4Bank × 32 )同步DRAM [256Mb (2M】4Bank】32) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 18 页 / 296 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第1页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第2页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第4页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第5页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第6页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第7页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第8页浏览型号EM481M3244VBB-75FE的Datasheet PDF文件第9页  
eorex
Pin Description (Simplified)
Pin
J1
J8
Name
CLK
/CS
EM488M3244VBB
Function
(System Clock)
Master clock input (Active on the positive rising edge)
(Chip Select)
Selects chip when active
(Clock Enable)
Activates the CLK when “H” and deactivates when “L”.
CKE should be enabled at least one cycle prior to new
command. Disable input buffers for power down in standby.
(Address)
Row address (A0 to A11) is determined by A0 to A11 level at
the bank active command cycle CLK rising edge.
CA (CA0 to CA8) is determined by A0 to A8 level at the read or
write command cycle CLK rising edge.
And this column address becomes burst access start address.
A10 defines the pre-charge mode. When A10= High at the
pre-charge command cycle, all banks are pre-charged.
But when A10= Low at the pre-charge command cycle, only the
bank that is selected by BA is pre-charged.
(Bank Address)
Selects which bank is to be active.
(Row Address Strobe)
Latches Row Addresses on the positive rising edge of the CLK
with /RAS “L”. Enables row access & pre-charge.
(Column Address Strobe)
Latches Column Addresses on the positive rising edge of the
CLK with /CAS low. Enables column access.
(Write Enable)
Latches Column Addresses on the positive rising edge of the
CLK with /CAS low. Enables column access.
(Data Input/Output Mask)
DQM controls I/O buffers.
J2
CKE
G8,G9,F7,F3,G1,
G2,G3,H1,H2,J3,
G7,H9
A0~A11
J7,H8
J9
BA0,BA1
/RAS
K7
/CAS
K8
K9,K1,F8,F2
R8,N7,R9,N8,P9,
M8,M7,L8,L2,M3,
M2,P1,N2,R1,N3,
R2,E8,D7,D8,B9,
C8,A9,C7,A8,A2,
C3,A1,C2,B1,D2,
D3,E2
A7,F9,L7,R7
A3,F1,L3,R3
B2,B7,C9,D9,E1,
L1,M9,N9,P2,P7
B8,B3,C1,D1,E9,
L9,M1,N1,P3,P8
Jul. 2006
/WE
DQM0~DQM3
DQ0~DQ31
(Data Input/Output)
DQ pins have the same function as I/O pins on a conventional
DRAM.
V
DD
V
SS
V
DDQ
V
SSQ
(Power Supply)
power supply pins for internal circuits.
(Ground)
ground pins for internal circuits.
(Power Supply)
power supply pins for the output buffers.
(Ground)
ground pins for the output buffers.
www.eorex.com
3/18