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S1L56684 参数 Datasheet PDF下载

S1L56684图片预览
型号: S1L56684
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度门阵列 [HIGH DENSITY GATE ARRAY]
分类和应用:
文件页数/大小: 12 页 / 96 K
品牌: EPSON [ EPSON COMPANY ]
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DATA SHEET
ASIC
S1L50000
Œ
ELECTRICAL CHARACTERISTICS AND SPECIFICATIONS
Absolute Maximum Ratings (For Single Power Supply):
(V
ss
= 0V)
Item
Power Supply Voltage
Input Voltage
Output Voltage
Output Current/Pin
Storage Temperature
*
Symbol
V
DD
V
I
V
O
I
OUT
T
STG
Limits
-0.3 to 4.0
*1
-0.3 to V
DD
+ 0.5
*1
-0.3 to V
DD
+ 0.5
±
30
-65 to 150
V
V
V
mA
°C
Unit
1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH
systems.
Absolute Maximum Ratings (For Dual Power Supplies):
(V
ss
= 0V)
Item
Power Supply Voltage
Symbol
HV
DD
LV
DD
Limits
-0.3 to 7.0
-0.3 to 4.0
-0.3 to HV
DD
+ 0.5
-0.3 to LV
DD
+ 0.5
*1
*1
*1
Unit
V
V
V
V
V
V
mA
°C
Input Voltage
HV
I
LV
I
Output Voltage
HV
O
LV
O
-0.3 to HV
DD
+ 0.5
-0.3 to LV
DD
+ 0.5
±
30 (± 50 )
-65 to 150
*2
*1
Output Current/Pin
Storage Temperature
**
I
OUT
T
STG
1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH
systems.
*2: Possible to use for 24mA of output buffer.
EPSON ELECTRONICS AMERICA, INC.
i
150 River Oaks Pkwy
i
San Jose, CA 95134
i
Tel: (408) 922-0200
i
Fax: (408) 922-0238
3