SED1530 Series
s
ELECTRICAL CHARACTERISTICS
q
DC Characteristics
Item
Power voltage(1) Recommended
Operation
Operational
Operating voltage Operational
(2) Operational
Operational
High-level input voltage
Symbol
V
DD
(V
SS
= 0 V, V
DD
= 5 V
±10%,
Ta = –40 to +85°C unless otherwise noted.)
Condition
Min.
4.5
2.4
V
5
V
1
, V
2
V
3
, V
4
V
IHC
V
DD
= 2.7 V
Low-level input voltage
CMOS
V
ILC
V
DD
= 2.7 V
High-level output voltage
V
OHC
I
OH
= –1 mA
V
DD
= 2.7 V, I
OH
= –0.5 mA
Low-level output voltage
V
OLC
I
OL
= 1 mA
V
DD
= 2.7 V, I
OL
= 0.5 mA
High-level input voltage
Schmitt
V
IHS
V
DD
= 2.7 V
Low-level input voltage
V
ILS
V
DD
= 2.7 V
Input leakage current
Output leakage current
LCD driver ON resistance
I
LI
I
LO
R
ON
Ta = 25°C
V
DD
level
Static current consumption
I
SSQ
I
5Q
Input pin capacity
Oscillation frequency
C
IN
V
5
= –14.0 V
V
5
= –8.0 V
V
IN
= V
DD
or V
SS
V
DD
level (V
DD
= 0 V)
V
DD
level (V
DD
= 0 V)
V
DD
level (V
DD
= 0 V)
–16.0
0.4
×
V
5
V
5
0.7
×
V
DD
0.8
×
V
DD
V
SS
V
SS
0.8
×
V
DD
0.8
×
V
DD
V
SS
V
SS
0.85
×
V
DD
0.8
×
V
DD
V
SS
V
SS
–1.0
–3.0
–
–
–
–
–
18
18
2.4
2.4
–18.0
–18.0
Typ.
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max.
5.5
6.0
–4.5
V
DD
0.6
×
V
5
V
DD
V
DD
0.3
×
V
DD
0.2
×
V
DD
V
DD
V
DD
0.2
×
V
DD
0.2
×
V
DD
V
DD
V
DD
0.15
×
V
DD
0.2
×
V
DD
1.0
3.0
3.0
4.5
5.0
15.0
8.0
26
26
6.0
4.5
–
–6.0
Unit
V
Pin used
V
SS
*1
V
V
V
V
V
5
V
1
, V
2
V
3
, V
4
*2
*3
*3
V
*3
*3
V
*5
*5
V
*5
*5
*4
*4
*4
*4
–
–
2.0
3.0
0.01
0.01
5.0
22
22
–
–
–
–
µA
µA
KΩ
SEG n
COM n
*6
*7
*8
µA
µA
pF
kHz
V
SS
V
5
*3 *4
*9
V
IN
= V
DD
or V
SS
V
5
= –18.0 V (V
DD
level)
Ta = 25°C, f = 1 MHz
Ta = 25°C
V
DD
= 5 V
V
DD
= 2.7 V
f
OSC
V
DD
Input voltage
Built-in power circuit
Triple boosting
Quadruple boosting
V
*10
Booster output voltage
Voltage regulator operation
voltage
Voltage follower operation
voltage
Reference voltage
V
OUT
V
OUT
Triple voltage conversion (V
DD
level)
(V
DD
level)
V
V
V
OUT
V
OUT
V5
(V
DD
level)
–18.0
–16.0
–
–
–2.55
–6.0
–4.5
–2.35
V
*11
V
REG
Ta = 25°C (V
DD
level)
–2.75
V
7
EPSON [ EPSON COMPANY ]
