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F25L004A_09 参数 Datasheet PDF下载

F25L004A_09图片预览
型号: F25L004A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存 [3V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 418 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Fast-Read (50 MHz ; 100 MHz)
The High-Speed-Read instruction supporting up to 100 MHz is
initiated by executing an 8-bit command, 0BH, followed by
address bits [A
23
-A
0
] and a dummy byte. CE must remain active
low for the duration of the High-Speed-Read cycle. See Figure 3
for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the
High-Speed-Read instruction outputs the data starting from the
specified address location. The data output stream is continuous
F25L004A
through all addresses until terminated by a low to high transition
on CE . The internal address pointer will automatically increment
until the highest memory address is reached. Once the highest
memory address is reached, the address pointer will
automatically increment to the beginning (wrap-around) of the
address space, i.e. for 4Mbit density, once the data from address
location 7FFFFH has been read, the next output will be from
address location 000000H.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
71 72
80
SI
MSB
0B
ADD.
MSB
HIGH IMPENANCE
ADD.
ADD.
X
N
D
OUT
MSB
N+1
D
OUT
N+2
D
OUT
N+3
D
OUT
N+4
D
OUT
SO
Note : X = Dummy Byte : 8 Clocks Input Dummy (V
IL
or V
IH
)
Figure 3 : HIGH-SPEED-READ SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.6
9/30