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F25S04PA-86PG 参数 Datasheet PDF下载

F25S04PA-86PG图片预览
型号: F25S04PA-86PG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Read (33MHz)
(Preliminary)
F25S04PA
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
(wrap-around) of the address space, i.e. for 4Mbit density, once
the data from address location 7FFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A
23
-A
0
]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
Figure 2: Read Sequence
Fast Read (50 MHz ~ 100 MHz)
The Fast Read instruction supporting up to 100 MHz is initiated
by executing an 8-bit command, 0BH, followed by address bits
[A
23
-A
0
] and a dummy byte. CE must remain active low for the
duration of the Fast Read cycle. See Figure 3 for the Fast Read
sequence.
Following a dummy byte (8 clocks input dummy cycle), the Fast
Read instruction outputs the data starting from the specified
address location. The data output stream is continuous through
all addresses until terminated by a low to high transition on CE .
The internal address pointer will automatically increment until the
highest memory address is reached. Once the highest memory
address is reached, the address pointer will automatically
increment to the beginning (wrap-around) of the address space,
i.e. for 4Mbit density, once the data from address location
7FFFFH has been read, the next output will be from address
location 000000H.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
71 72
80
SI
MSB
0B
ADD.
MSB
HIGH IMPENANCE
ADD.
ADD.
X
N
D
OUT
MSB
N+1
D
OUT
N+2
D
OUT
N+3
D
OUT
N+4
D
OUT
SO
Note : X = Dummy Byte : 8 Clocks Input Dummy (V
IL
or V
IH
)
Figure 3: Fast Read Sequence
Elite Semiconductor Memory Technology Inc.
Publication Date:
May
2009
Revision:
0.2
11/34