欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25S04PA-86PG 参数 Datasheet PDF下载

F25S04PA-86PG图片预览
型号: F25S04PA-86PG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25S04PA-86PG的Datasheet PDF文件第8页浏览型号F25S04PA-86PG的Datasheet PDF文件第9页浏览型号F25S04PA-86PG的Datasheet PDF文件第10页浏览型号F25S04PA-86PG的Datasheet PDF文件第11页浏览型号F25S04PA-86PG的Datasheet PDF文件第13页浏览型号F25S04PA-86PG的Datasheet PDF文件第14页浏览型号F25S04PA-86PG的Datasheet PDF文件第15页浏览型号F25S04PA-86PG的Datasheet PDF文件第16页  
ESMT
Fast Read Dual Output (50 MHz
~
100 MHz)
(Preliminary)
F25S04PA
The Fast Read Dual Output (3BH) instruction is similar to the
standard Fast Read (0BH) instruction except the data is output
on SI and SO pins. This allows data to be transferred from the
device at twice the rate of standard SPI devices. This instruction
is for quickly downloading code from Flash to RAM upon
power-up or for applications that cache code- segments to RAM
for execution.
The Fast Read Dual Output instruction is initiated by executing
an 8-bit command, 3BH, followed by address bits [A
23
-A
0
] and a
dummy byte. CE must remain active low for the duration of the
Fast Read Dual Output cycle. See Figure 4 for the Fast Read
Dual Output sequence.
Figure 4: Fast Read Dual Output Sequence
Elite Semiconductor Memory Technology Inc.
Publication Date:
May
2009
Revision:
0.2
12/34