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F49L040A 参数 Datasheet PDF下载

F49L040A图片预览
型号: F49L040A
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 )只有3V CMOS闪存 [4 Mbit (512K x 8) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 41 页 / 391 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EFST
Figure 16 shows the algorithms and Figure 15 shows
the timing diagram. This method uses standard
microprocessor bus cycle timing. For sector unprotect,
all unprotected sectors must first be protected prior to
the first sector unprotect write cycle.
F49L040A
When using programming equipment, this mode
requires V
ID
(11.5 V to 12.5 V) on address pin A9.
While address pins A3, A2, A1, and A0 must be as
shown in Table 3.
To verify sector protection, all necessary pins have to
be set as required in Table 3, the programming
equipment may then read the corresponding identifier
code on DQ7-DQ0.
To access the auto-select codes in-system, the host
system can issue the auto-select command via the
command register, as shown in Table 4. This method
does not require V
ID
. See “ Software Command
Definitions” for details on using the auto-select mode.
Auto-select Mode
The auto-select mode provides manufacturer and
device identification and sector protection verification,
through outputs on DQ7–DQ0. This mode is primarily
intended for programming equipment to automatically
match a device to be programmed with its
corresponding programming algorithm. However, the
auto-select codes can also be accessed in-system
through the command register.
7.2 Software Command Definitions
Writing specific address and data commands or
sequences into the command register initiates the
device operations. Table 4 defines the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence
resets the device to reading array data.
All addresses are latched on the falling edge of
WE
or
CE
, whichever happens later. All data is latched on
the rising edge of
WE
or
CE
, whichever happens
first. Refer to the corresponding timing diagrams in
the AC Characteristics section.
Table 4. F49L040A Software Command Definitions
Command
Reset (5)
Read (4)
Program
Chip Erase
Sector Erase
Sector Erase
Suspend (6)
Sector Erase Resume
(7)
Auto-select
Notes:
1. X = don’t care
RA = Address of memory location to be read.
RD = Data to be read at location RA.
PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
2. Except Read command and Auto-select command, all command bus cycles are write operations.
3. Address bits A18–A16 are don’t cares.
4. No command cycles required when reading array data.
5. The system may read and program in non-erasing sectors, or enter the auto-select mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
6. The Erase Resume command is valid only during the Erase Suspend mode.
Bus
Cycles
1
1
4
6
6
1
1
1st Bus
Cycle
Addr
XXXH
RA
555H
555H
555H
XXXH
XXXH
Data
F0H
RD
AAH
AAH
AAH
B0H
30H
2nd Bus
Cycle
Addr
-
-
2AAH
2AAH
2AAH
-
-
Data
-
-
55H
55H
55H
-
-
3rd Bus
Cycle
Addr
-
-
555H
555H
555H
-
-
Data
-
-
A0H
80H
80H
-
-
See Table 5.
4th Bus
Cycle
Addr
-
-
PA
555H
555H
-
-
Data
-
-
PD
AAH
AAH
-
-
2AAH
2AAH
-
-
55H
55H
-
-
555H
SA
-
-
10H
30H
-
-
5th Bus
Cycle
Addr
-
-
Data
-
-
6th Bus
Cycle
Addr
-
-
Data
-
-
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
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