EliteMT
EDO-PAGE-MODE EARLY-WRITE CYCLE
t
RASC
RAS
V
IH
V
IL
M11B416256A
t
RP
t
CSH
t
CRP
CASL ,CASH
V
IH
V
IL
t
RCD
t
CAS,
t
CLCH
t
PC
(NOTE1)
t
CAS,
t
CLCH
t
CP
t
CP
t
RSH
t
CAS,
t
CLCH
t
CP
t
AR
t
RAD
t
ASR
ADDR
V
IH
V
IL
t
RAH
t
ASC
t
CAH
COLUMN
t
ASC
t
CAH
COLUMN
t
ASC
t
RAL
t
CAH
ROW
ROW
COLUMN
t
CWL
t
WCS
t
WCH
t
WP
t
WCS
t
CWL
t
WCH
t
WP
t
WCS
t
CWL
t
WCH
t
WP
WE
V
IH
V
IL
t
DS
I/O
V
IH
V
IL
t
WCR
t
DHR
t
DH
t
RWL
t
DS
t
DH
t
DS
t
DH
VAL ID DATA
VAL ID DATA
VAL ID DATA
OE
V
IH
V
IL
EDO-PAGE-MODE READ-WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
t
RASC
RAS
V
IH
V
IL
t
RP
t
CSH
t
CRP
CASL ,CASH
V
IH
V
IL
t
RCD
t
CAS,
t
CLCH
t
CP
t
PCM
t
CAS,
t
CLCH
t
RSH
t
CP
t
CAS,
t
CLCH
t
CP
t
AR
t
RAD
t
ASR
ADDR
V
IH
V
IL
t
RAH
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
RAL
t
CAH
ROW
ROW
COLUMN
COLUMN
COLUMN
t
RWD
t
RCS
t
CWL
t
WP
t
CWL
t
WP
t
RWL
t
CWL
t
AWD
t
CWD
t
WP
t
AWD
t
CWD
WE
V
IH
V
IL
t
AWD
t
CWD
t
AA
t
RAC
t
CAC
t
CLZ
t
DH
t
DS
t
AA
t
ACP
t
CAC
t
CLZ
VALI D VALI D
D
OUT
D
IN
VALI D VALI D
D
OUT
D
IN
t
AA
t
DH
t
DS
t
ACP
t
DS
t
CAC
t
CLZ
VALID VALI D
D
OUT
D
IN
t
DH
I/O
V
I/O H
V
I/O L
t
OFF2
t
O AC
OE
V
IH
V
IL
t
OFF2
t
O AC
t
O AC
t
OFF2
t
OEH
DON'T CARE
UNDEFINED
Note : 1. t
PC
can be measured from falling edge to falling edge of
CAS
, or from rising edge to rising edge of
CAS
. Both
measurements must meet the t
PC
specification.
Elite Memory Technology Inc
Publication Date
:
Feb. 2004
Revision
:
1.9
10/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
