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M11B416256A-25J 参数 Datasheet PDF下载

M11B416256A-25J图片预览
型号: M11B416256A-25J
PDF下载: 下载PDF文件 查看货源
内容描述: 256千×16 EDO DRAM页模式 [256 K x 16 DRAM EDO PAGE MODE]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 375 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EliteMT
FUNCTIONAL BLOCK DIAGRAM
M11B416256A
WE
RAS
CASL
CASH
CONTROL
LOGIC
DATA-IN BUFFER
16
IO0
:
IO15
CLOCK
GENERATOR
COLUMN
DECODER
512
16
DATA-OUT
BUFFER
OE
16
9
9
A0
A1
A2
A3
A4
A5
A6
A7
A8
9
COLUMN
ADDRESS
BUFFER
REFRESH
CONTROLER
SENSE AMPLIFIERS
I/O GATING
8
512 x 16
REFRESH
COUNTER
99
ROW.
ADDRESS
BUFFERS(9)
9
ROW
DECODER
512 x 512 x 16
MEMORY
ARRAY
512
V
BB
GENERATOR
V
CC
V
SS
PIN DESCRIPTIONS
PIN NO.
16~19,22~26
14
28
29
13
PIN NAME
A0~A8
RAS
CASH
CASL
TYPE
Input
Input
Input
Input
DESCRIPTION
Address Input
Row Address : A0~A8
Column Address : A0~A8
Row Address Strobe
Column Address Strobe / Upper Byte Control
Column Address Strobe / Lower Byte Control
WE
OE
Input
Input
Input / Output
Supply
Ground
-
Write Enable
Output Enable
Data Input / Output
Power, 5V
Ground
No Connect
27
2~5,7~10,31~34,36~39
1,6,20
21,35,40
11,12,15,30
I/O0 ~ I/O15
V
CC
V
SS
NC
Elite Memory Technology Inc
Publication Date
:
Feb. 2004
Revision
:
1.9
2/15