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M11B416256A-25T 参数 Datasheet PDF下载

M11B416256A-25T图片预览
型号: M11B416256A-25T
PDF下载: 下载PDF文件 查看货源
内容描述: 256千×16 EDO DRAM页模式 [256 K x 16 DRAM EDO PAGE MODE]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 15 页 / 375 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EliteMT
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-1V to +7V
Operating Temperature, T
A
(ambient) ….0
°
C to +70
°
C
Storage Temperature (plastic) ……….-55
°
C to +150
°
C
Power Dissipation …………………………………1.43W
Short Circuit Output Current ……………………50mA
M11B416256A
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
°
C
T
A
70
°
C ; V
CC
= 5V
±
10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Note : 1.All Voltages referenced to V
SS
0V
V
IN
V
IH
(max)
0V
V
OUT
V
CC
Output(s) disable
I
OH
= -5 mA
I
OL
= 4.2 mA
V
CC
V
SS
V
IH
V
IL
I
LI
I
LO
V
OH
V
OL
4.5
0
2.4
-0.3
-10
-10
2.4
-
5.5
0
V
CC
+0.3
0.8
10
10
-
0.4
V
V
V
V
µ
A
µ
A
1
1
1
V
V
PARAMETER
CONDITIONS
RAS
,
CAS
cycling , t
RC
=min
SYMBOL
MAX
-25
-28
-30 -35 -40
UNITS NOTES
Operating Current
Standby Current
RAS
only refresh Current
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
210 190 170 150 135
4
2
4
2
4
2
4
2
4
2
mA
mA
mA
mA
mA
mA
mA
1,2
TTL interface ,
RAS
,
CAS
= V
IH
,
D
OUT
=High-Z
CMOS interface,
RAS
,
CAS
V
CC
-0.2V
t
RC
= min
t
PC
= min
RAS
=V
IH
,
CAS
= V
IL
210 190 170 150 135
210 190 170 150 135
5
5
5
5
5
2
1,3
1
EDO Page Mode Current
Standby Current
CAS
Before
RAS
Refresh
Current
t
RC
= min
210 190 170 150 135
Note
:
1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while
RAS
=V
IL .
3. Address can be changed once or less while
CAS
=V
IH
.
Elite Memory Technology Inc
Publication Date
:
Feb. 2004
Revision
:
1.9
3/15