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M12L32162A-6TG 参数 Datasheet PDF下载

M12L32162A-6TG图片预览
型号: M12L32162A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的X 2Banks同步DRAM [1M x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 29 页 / 756 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
Function
BA
RFU
A11~A10/AP
RFU
A9
W.B.L
A8
TM
A7
A6
A5
A4
A3
BT
M12L32162A
A2
A1
A0
CAS Latency
Burst Length
Test Mode
A8
0
0
1
1
A7
0
1
0
1
Type
Mode Register Set
Reserved
Reserved
Reserved
A6
0
0
0
0
1
1
1
1
CAS Latency
A5
0
0
1
1
0
0
1
1
A4
0
1
0
1
0
1
0
1
Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Burst Type
A3
0
1
Type
Sequential
Interleave
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
Burst Length
A0
0
1
0
1
0
1
0
1
BT = 0
1
2
4
8
BT = 1
1
2
4
8
Write Burst Length
A9
0
1
Length
Burst
Single Bit
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
Full Page Length : 256
Note :
1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Mar. 2009
Revision
:
1.2
7/29