ESMT
Parameter
Active to Precharge command
Active to Active command
(same bank)
Auto Refresh row cycle time
Active to Read, Write delay
Precharge command period
Active bank A to Active bank B
command
Write recovery time
Write data in to Read command
delay
Col. address to Col. address
delay
Active to Auto Precharge delay
Average periodic Refresh
interval ( 0℃
≦T
C
≦ +85℃
)
Average periodic Refresh
interval (+85℃
＜T
C
≦ +95℃)
Write preamble
Write postamble
DQS Read preamble
DQS Read postamble
Load Mode Register / Extended
Mode Register cycle time
Auto Precharge write recovery
+ Precharge time
Internal Read to Precharge
command delay
Exit Self Refresh to Read
command
Exit Self Refresh to non-Read
command
Exit Precharge Power-Down to
any non-Read command
Exit Active Power-Down to
Read command
Exit active power-down to Read
command
(slow exit / low power mode)
CKE minimum pulse width
(high and low pulse width)
t
CKE
3
-
3
Symbol
t
RAS
t
RC
t
RFC
t
RCD
t
RP
t
RRD
t
WR
t
WTR
t
CCD
t
RAP
t
REFI
t
REFI
t
WPRE
t
WPST
t
RPRE
t
RPST
t
MRD
t
DAL
t
RTP
t
XSRD
t
XSNR
t
XP
t
XARD
-2.5
Min.
45
57.5 (-
CL5
)
60 (-
CL6
)
105
12.5 (-
CL5
)
15 (-
CL6
)
12.5 (-
CL5
)
15 (-
CL6
)
7.5
15
7.5
2
t
RCD
(min.)
-
-
0.35
0.4
0.9
0.4
2
WR+RU(t
WR
/ t
CK
)
+(t
RP
/ t
CK
(avg)
)
7.5
200
t
RFC
+ 10
2
2
Max.
70K
-
-
-
-
-
-
-
-
-
7.8
3.9
-
0.6
1.1
0.6
-
-
-
-
-
-
-
Min.
45
60
105
15
15
7.5
15
7.5
2
t
RCD
(min.)
-
-
0.35
0.4
0.9
0.4
2
WR+RU(t
WR
/ t
CK
)
+(t
RP
/ t
CK
(avg)
)
7.5
200
t
RFC
+ 10
2
2
-3
M14D5121632A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
t
CK
ns
us
us
t
CK
(avg)
t
CK
(avg)
t
CK
(avg)
t
CK
(avg)
t
CK
t
CK
ns
t
CK
ns
t
CK
t
CK
3
1
11
12
Note
Max.
70K
-
-
-
-
-
-
-
-
-
7.8
3.9
-
0.6
1.1
0.6
-
-
-
-
-
-
-
t
XARDS
8 - AL
-
7 - AL
-
t
CK
2,3
-
t
CK
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
12/59
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
