ESMT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，T
A
= 0 to 70 °C
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Test Condition
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=10ns
Input signals are changed one time during 20ns
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3P
I
CC3PS
I
CC3N
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 2clks
All other pins
≥
V
DD
-0.2V or
≤
0.2V
I
CC3NS
Operating Current
(Burst Mode)
Refresh Current
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
t
RC
≥
t
RC
(min)
TCSR range
Self Refresh Current
I
CC6
CKE
≤
0.2V
4 Banks
2 Bank
1 Bank
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
150
15
380
360
340
M52S128168A
-7
Version
-7.5
80
0.5
0.5
10
-10
Unit Note
mA
mA
mA
mA
1
10
5
2
25
mA
mA
mA
15
85
130
45
400
380
350
10
120
70
500
450
400
mA
mA
1
I
CC4
I
CC5
mA
2
°C
uA
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 64ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2008
Revision: 1.2
4/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
