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M53D128168A_1 参数 Datasheet PDF下载

M53D128168A_1图片预览
型号: M53D128168A_1
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行移动DDR SDRAM [2M x 16 Bit x 4 Banks Mobile DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 46 页 / 1076 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Basic Functionality
Power-Up and Initialization Sequence
M53D128168A
Operation Temperature Condition -40°C~85°C
The following sequence is required for POWER UP and Initialization.
1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.)
-
Apply V
DD
before or at the same time as V
DDQ.
2. Start clock and maintain stable condition for a minimum.
3. The minimum of 200us after stable power and clock (CLK, CLK ),apply NOP & take CKE high.
4. Issue precharge commands for all banks of the device.
5. Issue 2 or more auto-refresh commands.
6. Issue mode register set command to initialize the mode register.
7. Issue extended mode register set command to set PASR and DS.
0
CLOCK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
CKE
High level is necessary
CS
t
RP
RAS
t
RFC
t
RFC
t
MRD
t
MRD
CAS
ADDR
Key
Key
RA
BA1
BS
BA0
BS
A10 /AP
RA
DQ
High-Z
WE
DQM
High level is necessary
Precharge
(All Banks)
Auto Refresh
Auto Re fresh
Mode Register Set
Row Active
Extended Mode
Register Set
: Don't care
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2008
Revision : 1.0
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