4N60
Junction Temperature
Storage Temperature
＊
T
J
T
STG
+150
-55~+150
℃
℃
Drain current limited by maximum junction temperature.
■
Thermal Characteristics
Parameter
Thermal Resistance Junction-Ambient
Symbol
TO-220
R
thJA
R
thCS
R
thJC
0.5
1.2
62.5
--
3.65
Ratings
TO-220F
TO-252
50
（110）
--
2.56
℃/W
＊
Units
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
■
Electrical Characteristics
（T
J
=25℃,unless Otherwise specified.）
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Current
Forward
BV
DSS
I
DSS
V
GS
=0V,I
D
=250µA
V
DS
=600V,V
GS
=0V
V
DS
=480V,T
C
=125℃
I
GSS
△BV
DSS
/△T
J
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250µA
600
--
--
--
--
--
--
--
--
--
--
0.7
--
1
10
100
-100
--
V
µA
µA
nA
nA
V/℃
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward
Voltage
Continuous Drain-Source Current
V
SD
V
GS
=0V
I
SD
=4.0A(TO220,TO220F)
I
SD
=2.8A(TO252)
TO-220,TO-220F
TO-252
Pulsed Drain-Source Current
Reverse Recovery Time
I
SM
t
RR
TO-220,TO-220F
TO-252
I
SD
=4.0A,
dI
SD
/dt=100A/µs
--
--
1.4
V
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DD
=300V,
I
D
=4.0A(TO220,TO220F)
I
D
=2.8A(TO252)
R
G
=25
(Note 4, 5)
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
V
DS
=10V,
I
D
=2.0A(TO220,TO220F)
I
D
=1.4A(TO252)
2.0
--
--
2.0
4.0
2.5
V
C
ISS
C
OSS
C
RSS
V
DS
=25V,V
GS
=0V,
f=1MH
Z
--
--
--
560
55
7
--
--
--
pF
pF
pF
--
--
--
--
--
--
--
10
40
40
50
16
2.5
6.5
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
=480V,
I
D
=4.0A(TO220,TO220F)
I
D
=2.8A(TO252)
V
GS
=10V
(Note 4, 5)
I
SD
--
--
--
--
--
--
--
--
--
--
300
2.0
4.0
2.8
16.0
11.2
--
--
A
A
ns
µC
Reverse Recovery Charge
Q
RR
(Note 4)
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20 mH, I
AS
= 4.0 A, V
DD
= 50V, R
G
= 25
Ω,
Starting TJ = 25°C
3. I
SD
≤
4.0 A, di/dt
≤
200A/μs, V
DD
≤BV
DSS
, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤300μs,
Duty cycle≤ 2%
5. Essentially independent of operating temperature
2
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ESTEK [ Estek Electronics Co. Ltd ]
