E 75N075
HEXFET
Electrical Characteristics @T
J
=25 °C (unless otherwise specified)
ْ
Parameter
V
(BR)DSS
△
V
(BR)DSS
/
△
T
J
®
Power MOSFET
Test Conditions
Min.
75
—
—
2.0
20
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.074
—
—
—
—
—
—
—
—
—
—
13
64
49
48
4.5
Max. Units
—
—
13.0
4.0
—
25
250
100
-100
160
29
55
—
—
—
—
—
nS
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage current
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
Gate-to-Source charge
Gate-to-Drain ("Miller") charge
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
V
GS
=0V,I
D
=
250uA
V/°C Reference to 25°C,I
D
=1mA
mΩ V
GS
=10V,I
D
=40A
V
S
μA
nA
V
DS
=25V,I
D
=40A
V
DS
=75V,V
GS
=0V
V
DS
=60V,V
GS
=0V,T
J
=150°C
V
GS
=20V
V
GS
=-20V
⑤
R
DS(on)
V
GS(th)
V
DS
=V
GS
, I
D
=250μA
⑤
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
I
D
=40A
nC V
DS
=60V
V
GS
=10V See Fig.6 and 13
⑤
V
DD
=38V
I
D
=40A
R
G
=2.5Ω
V
GS
=10V See Figure 10
⑤
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Min.
.
.
—
—
—
—
—
Typ.
—
—
—
100
410
—
—
—
—
7.5
3820
610
130
Max.
75
A
300
1.3
150
610
V
—
—
—
—
Units
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
V
GS
=0V
pF V
DS
=25V
f=1.0MH
Z
See Figure 5
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25°C,I
S
=40A,V
GS
=0V
T
J
=25°C,I
F
=40A
di/dt=100A/μs
⑤
⑤
Source-Drain Ratings and Characteristics
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
②
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
nS
nC
t
on
Forward Turn-on Time
Notes:
①
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L
D
)
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
②
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)
③
④
Starting T
J
= 25°C, L = 370mH, R
G
= 25Ω, I
AS
= 40A,
V
GS
=10V (See Figure 12)
I
SD
≤
40A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
,T
J
≤
175°C
⑤
Pulse width
≤
400μs; duty cycle
≤
2%.
2
ESTEK [ Estek Electronics Co. Ltd ]
