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BC847BDW1T1 参数 Datasheet PDF下载

BC847BDW1T1图片预览
型号: BC847BDW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 460 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
10
7.0
T
f
, CURREN-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
C,CAPACITANCE(pF)
5.0
100
80
60
40
30
20
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
3.0
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
1.0
h
FE
, DC CURRENT GAIN (NORMALIZED)
0.8
2.0
1.0
V, VOLTAGE (VOLTS)
1.0
10
100
0.6
0.4
0.5
0.2
0.2
0.1 0.2
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR-EMITTER VOLTAGE(VOLTS)
2.0
-1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/ ° C)
1.6
-1.4
1.2
-1.8
0.8
-2.2
0.4
-2.6
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
-3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC846b–4/5