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BC847BDW1T1 参数 Datasheet PDF下载

BC847BDW1T1图片预览
型号: BC847BDW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 460 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.01
0.01
t, TIME (ms)
Figure 11. Thermal Response
-200
I
C
, COLLECTOR CURRENT (mA)
-100
The safe operating area curves indicate I
C
–V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
-1.0
-5.0
-10
-30
-45
-65
-100
-50
-10
-5.0
-2.0
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
BC846b–5/5