MC74VHC1GT00
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T
stg
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power dissipation in still air
Thermal resistance
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
ESD Withstand Voltage
Parameter
Value
– 0.5 to + 7.0
– 0.5 to +7.0
– 0.5 to +7.0
–0.5 to V
cc
+ 0.5
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
>2000
> 200
N/A
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
V
CC
=0
High or Low State
V
OUT
< GND; V
OUT
> V
CC
SC–88A, TSOP–5
SC–88A, TSOP–5
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
V
IN
V
OUT
T
A
t
r
,t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
I
LATCH–UP
Min
3.0
0.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
V
CC
=0
High or Low State
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VHT0–2/4
ETL [ E-TECH ELECTRONICS LTD ]
