MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
C
Device
V
R
T
, Diode Capacitance
= 4.0 Vdc, f = 1.0 MHz
pF
Min
Nom
6.8
10
12
15
22
27
33
47
100
Max
7.5
11
13.2
16.5
24.2
29.7
36.3
51.7
110
6.1
9.0
10.8
13.5
19.8
24.3
29.7
42.3
90
Q, Figure of Merit
V
= 4.0 Vdc,
f = 50 MHz
R
T
R
, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
Typ
2.7
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
Typ
450
400
400
400
350
300
200
150
100
MMBV2101LT1/MV2101
MMBV2103LT1
MV2104
MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
MV2111
MV2115
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
4.T
CC
,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT~ T
CC
is guaranteed by comparing C
T
at
~
V
R
=4.0Vdc,f=1.0MHz,T
A
= – 65
°C
with CT at V
R
=4.0Vdc,
f=1.0MHz,T
A
= + 85
°C
in the following equation,which
defines TC
C
:
C
T
(+85
°C
) – C
T
(–65
°C
)
10
6
.
TC
C
=
85+65
C
T
(25
°C
)
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T
R
, TUNING RATIO
T
R
is the ratio of C
T
measured at 2.0 Vdc divided by
C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q=
2πfC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
1/16”.
I6–2/3
ETL [ E-TECH ELECTRONICS LTD ]
