MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
TYPICAL DEVICE CHARACTERISTICS
1000
C
T
, DIODE CAPACITANCE (pF)
500
MV2115
200
100
50
T
A
= 25°C
f = 1.0 MHz
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
20
10
5.0
2.0
1.0
0.1
MMBV2101LT1/MV2101
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
NORMALIZED DIODE CAPACITANCE
1.040
100
50
I
R
, REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
–75
V
R
= 2.0Vdc
20
10
5.0
2.0
1.0
.50
.20
T
A
= 125°C
V
R
= 4.0Vdc
V
R
= 30Vdc
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
–50
–25
0
+25
+50
+75
+100
+125
T
A
= 75°C
T
A
= 25°C
.10
.05
.02
.01
0
5.0
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance
versus Junction Temperature
Figure 3. Reverse Current versus
Reverse Bias Voltage
5000
3000
2000
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
3000
2000
Q, FIGURE OF MERIT
MV2115
100
50
30
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
Q, FIGURE OF MERIT
1000
500
300
200
1000
500
300
200
MMBV2101LT1/MV2101
100
MV2115
50
30
20
10
10
20
30
50
70
100
200
300
T
A
= 25°C
f = 50 MHz
T
A
= 25°C
V
R
= 4.0 Vdc
MMBV2109LT1/MV2109
V
R
, REVERSE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 4. Figure of Merit versus
Reverse Voltage
Figure 5. Figure of Merit versus
Frequency
I6–3/3
ETL [ E-TECH ELECTRONICS LTD ]
