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EM562081BC-70 参数 Datasheet PDF下载

EM562081BC-70图片预览
型号: EM562081BC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8低功耗SRAM [256K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 115 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Operating Mode
Mode
Read
Write
Output Deselect
Standby
X
L
X
X
CE1#
L
L
L
H
CE2
H
H
H
X
OE#
L
X
H
X
WE#
H
L
H
X
EM562081
DQ0~DQ7
DOUT
DIN
High-Z
High-Z
High-Z
Power
Active
Active
Active
Standby
Standby
Note: X = don't care. H = logic high. L = logic low.
Absolute Maximum Ratings
Supply voltage, VDD
Input voltages, VIN
Input and output voltages, VI/O
Operating temperature, TOPR
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.3 to +4.6V
-0.3 to +4.6V
-0.5 to VDD + 0.5V
-40 to +85°C
-55 to +150°C
240°C
0.6 W
DC Recommended Operating Conditions (Ta=-40° C to 85° C)
Symbol
VDD
VIH
VIL
VDR
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Data Retention Supply Voltage
Min
2.7
2.2
-0.3
(2)
Typ
Max
3.6
VDD + 0.3
0.6
3.6
(1)
Unit
V
V
V
V
1.5
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
20ns
(2) Undershoot : -2.0V in case of pulse width
20ns
Preliminary
3
Rev 1.0
July 2001