欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM562081BC-70 参数 Datasheet PDF下载

EM562081BC-70图片预览
型号: EM562081BC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8低功耗SRAM [256K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 115 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM562081BC-70的Datasheet PDF文件第1页浏览型号EM562081BC-70的Datasheet PDF文件第2页浏览型号EM562081BC-70的Datasheet PDF文件第3页浏览型号EM562081BC-70的Datasheet PDF文件第4页浏览型号EM562081BC-70的Datasheet PDF文件第6页浏览型号EM562081BC-70的Datasheet PDF文件第7页浏览型号EM562081BC-70的Datasheet PDF文件第8页浏览型号EM562081BC-70的Datasheet PDF文件第9页  
EtronTech
Read Cycle
EM562081
AC Characteristics and Operating Conditions (Ta = -40° C to 85° C, V DD = 2.7V to 3.6V)
EM562081
Symbol
Parameter
-85
-70
Unit
70
70
70
35
25
25
ns
Min Max Min Max
tRC
tAA
tCO1
tCO2
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
Write Cycle
EM562081
Symbol
Parameter
-85
-70
Unit
30
ns
Read cycle time
Address access time
Chip Enable (CE1#) Access Time
Chip Enable (CE2) Access Time
Output enable access time
Chip Enable Low to Output in Low-Z
Output enable Low to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable High to Output in High-Z
Output Data Hold Time
85
10
3
10
85
85
85
45
35
35
70
10
3
10
Min Max Min Max
tWC
tWP
tCW
tAS
tWR
tWHZ
tOW
tDS
tDH
Write cycle time
Write pulse width
Chip Enable to end of write
Address setup time
Write Recovery time
WE# Low to Output in High-Z
WE# High to Output in Low-Z
Data Setup Time
Data Hold Time
85
55
70
0
0
5
35
0
35
70
55
60
0
0
5
30
0
AC Test Condition
Output load: 50pF + one TTL gate
Input pulse level: 0.4V, 2.4V
Timing measurements: 0.5 x V
DD
tR, tF: 5ns
Preliminary
5
Rev 1.0
July 2001