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EM636327Q-6 参数 Datasheet PDF下载

EM636327Q-6图片预览
型号: EM636327Q-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32高速同步图形DRAM ( SGRAM ) [512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)]
分类和应用: 动态存储器
文件页数/大小: 78 页 / 1387 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
T0
T1
T2
T3
T4
T5
T6
EM636327
into high-impedance at the end of the burst unless other command is initiated. The burst length,
burst sequence, and CAS# latency are determined by the mode register, which is already
programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to
column 0 and continue).
T7
T8
CLK
COM MAND
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Burst Read Operation
(Burst Length = 4, CAS# Latency = 1, 2, 3)
The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier
(i.e. DQM latency is two clocks for output buffers). A read burst without the auto precharge function
may be interrupted by a subsequent Read or Write/Block Write command to the same bank or the
other active bank before the end of the burst length. It may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank too. The interrupt coming from the Read command can
occur on any clock cycle following a previous Read command (refer to the following figure).
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COM MAND
READ A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
Read Interrupted by a Read
(Burst Length = 4, CAS# Latency = 1, 2, 3)
The DQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes
from a Write/Block Write command. The DQMs must be asserted (HIGH) at least two clocks prior to
the Write/Block Write command to suppress data-out on the DQ pins. To guarantee the DQ pins
against I/O contention, a single cycle with high-impedance on the DQ pins must occur between the
last read data and the Write/Block Write command (refer to the following three figures). If the data
output of the burst read occurs at the second clock of the burst write, the DQMs must be asserted
(HIGH) at least one clock prior to the Write/Block Write command to avoid internal bus contention.
Preliminary
7
December
1998