FLL200IB-1
L-Band Medium & High Power GaAs FET
S11
S22
+j100
1.2
1.3
2
+j50
1.1
+90°
3
S21
S12
+j25
1GHz
2.5
1.6
1.4
1.2
1GHz
1.8
2
SCALE FOR |S12|
2
2
+j250
2.5
1.9
1.8 0.06
180°
0.1
SCALE FOR |S21|
1.7
1.7
+j10
1
1GHz
1GHz
2.5
1.3
1.1
1.2
0
10
1.9
1.8
2
25
50Ω
1.5
1.4
250
1.9
1.8
0°
1.6
1.5 1.4
-j10
1.7
1.6
-j250
1.6
1.3
-j25
-j50
-j100
1.5
1.4
-90°
S-PARAMETERS
VDS = 10V, IDS = 4800mA
FREQUENCY
(MHZ)
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2500
S11
MAG
.888
.841
.754
.584
.353
.341
.490
.609
.680
.719
.753
.942
S21
ANG
MAG
1.517
1.761
2.113
2.559
2.876
2.754
2.443
2.215
2.096
2.034
1.953
.563
S12
ANG
13.5
-.2
-18.0
-42.4
-73.3
-105.9
-132.5
-156.1
-179.2
155.9
126.8
-15.5
S22
ANG
-5.0
-17.3
-33.3
-56.8
-86.9
-119.8
-147.5
-172.2
162.7
135.4
103.5
-39.0
MAG
.009
.012
.015
.019
.022
.021
.019
.017
.016
.015
.015
.006
MAG
.819
.796
.786
.790
.790
.800
.787
.764
.732
.716
.729
.451
ANG
150.3
147.5
145.9
142.7
140.7
136.5
131.6
127.5
123.4
121.2
116.4
32.7
124.3
110.9
91.4
60.4
1.2
-87.7
-133.3
-156.4
-170.8
179.5
173.8
145.3
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS
≈
0.6 IDSS
f = 1.5 GHz
Pout
Output Power (dBm)
44
42
40
38
36
34
32
50
η
add
30
20
21 23 25 27 29 31
Input Power (dBm)
10
3
η
add (%)
40