BSM 200 GB 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 8 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 200 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
1
-
C
oss
-
2
-
C
iss
-
13
-
g
fs
108
-
-
nF
S
I
GES
-
-
400
I
CES
-
-
3
12
4
-
nA
V
CE(sat)
-
-
2.5
3.1
3
3.7
mA
V
GE(th)
4.5
5.5
6.5
V
Values
typ.
max.
Unit
2
Oct-21-1997
EUPEC [ EUPEC GMBH ]
