BSM 200 GB 120 DN2
Typ. gate charge
V
GE
=
ƒ(Q
Gate
)
parameter:
I
C puls
= 200 A
20
V
Typ. capacitances
C
=
f
(V
CE
)
parameter:
V
GE
= 0 V, f = 1 MHz
10
2
nF
V
GE
16
14
12
10
8
10
0
6
4
2
0
0
200
400
600
800
1000
nC
1400
10
-1
0
Crss
Coss
600 V
800 V
C
10
1
Ciss
5
10
15
20
25
30
Q
Gate
V
V
CE
40
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
T
j
= 150°C
parameter:
V
GE
= 15 V
2.5
Short circuit safe operating area
I
Csc
= f(V
CE
) ,
T
j
= 150°C
parameter:
V
GE
= ± 15 V,
t
SC
≤
10 µs, L < 25 nH
12
I
Cpuls
/I
C
I
Csc
/I
C
8
1.5
6
1.0
4
0.5
2
0.0
0
200
400
600
800
1000 1200
V
1600
V
CE
0
0
200
400
600
800 1000 1200
V 1600
V
CE
6
Oct-21-1997