D 721 S
1000
1000
9
7
9
7
I
FM
Q
rr
5
4
5
4
-di/dt
V
R
Qrr
[µAs]
I
RM
Qrr
[µAs]
I
= 3000A
2000A
1000A
600A
300A
100A
FM
3
2
3
2
I
= 3000A
2000A
1000A
600A
FM
300A
100A
100
100
9
7
9
7
5
4
5
4
3
2
3
2
I
FM
Q
rr
-di/dt
V
R
I
RM
2
3
4
5
6
7 8 9
2
3
4
5 6 7 8 9
2
3
4
5
6
7 8 9
2
3
4
5 6 7 8 9
10
10
10
10
100
1000
100
1000
-di/dt [A/µs]
-di/dt [A/µs]
D 721 S_08
D 721 S_09
Fig. 8
Fig. 9
Reverse recovery charge (upper limit, ca. 98% values)
Reverse recovery charge (lower limit, ca. 2% values)
Application: GTO-freewheeling diode
Application: GTO-freewheeling diode
Parameter: IFM
Parameter: IFM
t
£ 125°C; C ³ 4µF
t
£ 125°C; C ³ 4µF
vj S
vj
S
R
S
= 0 W; V > 2000 V ... 3000 V
R = 0 W; V > 2000 V ... 3000 V
S R
R
10
10
9
9
I
= 3000A
FM
3000A
1000A
600A
7
7
1000A
600A
5
4
5
4
Eoff
[Ws]
Eoff
[Ws]
300A
300A
3
2
3
2
100A
100A
1
1
9
7
9
7
5
4
5
4
3
2
3
2
I
I
FM
FM
Q
Q
rr
rr
V
-di/dt
I
V
-di/dt
I
R(Spr)
R(Spr)
V
RM
V
R
RM
R
2
3
4
5
6
7 8 9
2
3
4
5 6 7 8 9
2
3
4
5
6
7 8 9
2
3
4
5 6 7 8 9
0,1
10
0,1
10
100
1000
100
1000
-di/dt [A/µs]
-di/dt [A/µs]
D 721 S_11
D 721 S_13
Fig. 11
Fig. 10
Turn-off-losses Eoff = f(di/dt)
diodes with VFmax
Turn-off-losses Eoff = f(di/dt)
diodes with VFmax
Application: GTO-freewheeling diode
VR(Spr) = 3000 V
VR(Spr) = 2000 V
Application: GTO-freewheeling diode
Parameter:I ; Snubberdiode D 291 S
FM
Parameter:I ; Snubberdiode D 291 S
FM
VR(Spr) = 3000 V
VR(Spr) = 2000 V
t
= 125°C; C = 4 µF für v £ V
S R
t
= 125°C; C = 6 µF für v £ V
vj
RM
= 24 µF für v ³ V
RM
vj
S
R
RM
= 36 µF für v ³ V
RM
C
S
C
S
R
R
L = 0,2 µH
S
L
= 0,2 µH
S