FDD6612A/FDU6612A
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
= 27 V, I
D
=10 A
Min
Typ
Max Units
51
10
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
V
GS
= 0 V,
I
D
= 250
µA
30
25
1
±100
V
mV/°C
µA
nA
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 9.5 A
I
D
= 8 A
I
D
= 9.5 A, T
J
=125°C
I
D
= 9.5 A
1
2.0
–5.1
15
20
23
28
3
V
mV/°C
20
28
33
mΩ
g
FS
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
660
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 Mv,
V
GS
= 0 V,
170
90
f = 1.0 MHz
2.3
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
9
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
5
24
4
6.7
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 9.5 A,
2.1
2.7
18
10
38
8
9.4
ns
ns
ns
ns
nC
nC
nC
FDD6612A/FDU6612A Rev. E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
