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FDD8896 参数 Datasheet PDF下载

FDD8896图片预览
型号: FDD8896
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用: 晶体晶体管开关
文件页数/大小: 11 页 / 130 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD8896 / FDU8896
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
POWER DISSIPATION MULTIPLIER
100
CURRENT LIMITED
BY PACKAGE
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
(
o
C)
150
175
75
1.0
0.8
0.6
50
0.4
25
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θ
JC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
I = I
25
175 - T
C
150
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
D M
, PEAK CURRENT (A)
100
30
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C