FDN304P
Typical Characteristics
5
I
D
= -2.4A
4
V
DS
= -5V
-10V
-15V
2100
1800
C
ISS
1500
1200
900
600
f = 1MHz
V
GS
= 0 V
3
2
1
300
0
0
2
4
6
8
10
12
14
0
5
C
OSS
C
RSS
10
15
20
0
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
10
10ms
1
V
GS
=-4.5V
SINGLE PULSE
R
θ
JA
= 270 C/W
T
A
= 25 C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
o
o
Figure 8. Capacitance Characteristics.
20
1ms
15
SINGLE PULSE
R
θ
JA
= 270°C/W
T
A
= 25°C
100ms
10s
DC
1s
10
0.1
5
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 270 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
0.001
0.0001
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN304P Rev B(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
