FDN336P
January 2005
FDN336P
Single P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
Features
•
•
•
–1.3 A, –20 V. R
DS(ON)
= 0.20
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.27
Ω
@ V
GS
= –2.5 V
Low gate charge (3.6 nC typical)
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT
TM
-3 provides low R
DS(ON)
and 30%
higher power handling capability than SOT23 in
the same footprint
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
°C
–
1.3
–10
0.5
0.46
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
336
Device
FDN336P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2005
Fairchild Semiconductor Corporation
FDN306P Rev D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
