Typical Electrical Characteristics
10
- I
D
, DRAIN-SOURCE CURRENT (A)
2
-3.0V
6
R
DS(on)
, NORMALIZED
8
V
GS
= -4.5V
-3.5V
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1
0.8
V
GS
= -2.5 V
-3.0V
-3.5V
-4.0V
-4.5V
-2.5V
4
2
-2.0V
0
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
- I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate
1.6
DRAIN-SOURCE ON-RESISTANCE
0.5
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -1.3A
1.4
I
D
= -0.6A
0.4
V
GS
= -4.5V
R
DS(ON)
, NORMALIZED
1.2
0.3
1
0.2
TA= 125°C
0.1
0.8
25°C
0
0
2
4
6
8
10
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
- V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
- I
S
, REVERSE DRAIN CURRENT (A)
4
10
V
DS
= -5V
- I
D
, DRAIN CURRENT (A)
3
V
GS
= 0V
1
TJ = -55°C
25°C
125°C
TJ = 125°C
25°C
2
0.1
-55°C
1
0.01
0
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source
Current
and Temperature.
FDN336P Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
