FDS4435A
Typical Characteristics
- I
D
, DRAIN-SOURCE CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-6.0V
-4.5V
-4.0V
-3.5V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
V
GS
= -3.5V
-4.0V
-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
-3.0V
-2.5V
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
0.07
1.6
R
DS(ON)
, ON RESISTANCE (OHM)
NORMALIZED ON-RESISTANCE
V
GS
= -10V
I
D
= -9A
I
D
= -4.5A
0.06
0.05
0.04
0.03
0.02
0.01
0
1.4
1.2
1
T
J
= 125 C
O
0.8
T
J
= 25 C
O
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
O
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature
40
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
100
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
30
T
J
= -55 C
O
25 C
125 C
O
-I
S
, REVERSE DRAIN CURRENT (A)
O
V
GS
= 0V
10
1
0.1
-55
o
C
0.01
0.001
0.0001
T
A
= 125
o
C
25
o
C
20
10
0
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
FDS4435A Rev.
D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
