FDS4435A
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -8.8A
8
(continued)
2500
V
DS
= -5V
-10V
-15V
CAPACITANCE (pF)
2000
C
ISS
f = 1 MHz
V
GS
= 0 V
6
1500
4
1000
2
500
C
OSS
C
RSS
0
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics
50
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
100µs
1ms
10ms
100ms
1
DC
V
GS
= -10V
SINGLE PULSE
o
R
θJA
= 125 C/W
T
A
= 25 C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics
100
40
POWER (W)
SINGLE PULSE
R
θJA
=125°C/W
T
A
= 25°C
30
1s
10s
20
0.1
10
0
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100
300
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
TR ANSI ENT T ER M
H
AL RESISTANC E
1
0.5
0.2
0.1
0
.05
0
.02
0
.01
0. 05
0
0. 02
0
0. 01
0
0.0
001
0. 01
0
0
.01
0.1
t
1
, TI M E (s e c )
1
10
100
300
D= 0
.5
0
.2
0
.1
005
.
0. 2
0
0
.01
S i n g le P ul s e
r(t), NORM AL
IZED EFFECTIVE
R
θ
J A
(t) = r(t) * R
θ
J A
R
θ
J A
= 125°C /W
P(pk )
t
1
t
2
T
J
- T
A
= P * R
θ
J ( t
A )
D u t y C y c l e, D = t
1
/t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS4435A Rev.
D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
