Typical Electrical Characteristics
30
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
V
GS
= 10V
6.0V
4.5V
4.0V
25
3.5V
20
15
2.5
V
GS
= 3.0V
2
3.5V
1.5
4.0V
4.5V
6.0V
3.0V
10
5
1
10V
2.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
1.8
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
0.1
V
GS
= 10 V
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 8.4 A
I
D
= 4 A
0.075
R
DS(ON)
, NORMALIZED
0.05
T
A
= 125°C
0.025
T
A
= 25°C
0
2
4
6
8
10
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
Temperature.
with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
30
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
25
20
15
10
5
0
0
1
2
T
A
= -55°C
25°C
125°C
V
GS
= 0V
5
1
TA = 125°C
0.1
25°C
0.01
-55°C
0.001
3
4
5
0.0001
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6612A Rev.C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
